SPN80T06 mosfet equivalent, n-channel mosfet.
* 60V/80A, RDS(ON)=9mΩ@VGS=10V 60V/80A, RDS(ON)=13mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maxi.
* DC/DC Converter
* Load Switch
* SMPS Secondary Side Synchronous Rectifier
* Motor Control
* Power .
The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices.
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