SPN8206 Datasheet - SYNC POWER

SPN8206 Common-Drain Dual N-Channel MOSFET

The SPN8206 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage a.

SPN8206 Features

* 20V/5.0A,RDS(ON)=8.2mΩ@VGS=4.5V

* 20V/3.0A,RDS(ON)=11.0mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* ESD capability 2KV

* TDFN2x3-6L package design APPLICATIONS

* Power Management

SPN8206 Datasheet (540.09 KB)

SPN8206 Datasheet Preview — Preview of SPN8206 PDF

Datasheet Details

Part number:

SPN8206

Manufacturer:

SYNC POWER

File Size:

540.09 KB

Description:

Common-drain dual n-channel mosfet.

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SPN8206 Common-Drain Dual N-Channel MOSFET SYNC POWER

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