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SPP2305 - P-Channel MOSFET

General Description

The SPP2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -15V/-3.5A,RDS(ON)=70mΩ@VGS=-4.5V.
  • -15V/-3.0A,RDS(ON)=85mΩ@VGS=-2.5V.
  • -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low.
  • RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-3L package design PIN.

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Datasheet Details

Part number SPP2305
Manufacturer SYNC POWER
File Size 318.75 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2305 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP2305 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter FEATURES  -15V/-3.5A,RDS(ON)=70mΩ@VGS=-4.5V  -15V/-3.0A,RDS(ON)=85mΩ@VGS=-2.5V  -15V/-2.