Datasheet4U Logo Datasheet4U.com

SPP4953 - P-Channel MOSFET

General Description

The SPP4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • ‹ -30V/-5.0A,RDS(ON)= 60mΩ@VGS=- 10V ‹ -30V/-4.5A,RDS(ON)= 80mΩ@VGS=- 6V ‹ -30V/-3.7A,RDS(ON)= 90mΩ@VGS=-4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP.
  • 8P package design.

📥 Download Datasheet

Datasheet Details

Part number SPP4953
Manufacturer SYNC POWER
File Size 191.86 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP4953 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPP42N03S2L-13 OptiMOS Power-Transistor Infineon Technologies AG
SPP46N03 SIPMOS Power Transistor Infineon Technologies
SPP46N03L SIPMOS Power Transistor Infineon Technologies
SPP47N10 SIPMOS Power-Transistor Infineon Technologies AG
SPP47N10L SIPMOS Power-Transistor Infineon Technologies AG

Other Datasheets by SYNC POWER

Part Number Description
SPP4953A P-Channel MOSFET
SPP4953B P-Channel MOSFET
SPP4953W P-Channel MOSFET
SPP4925 P-Channel MOSFET
SPP4925B P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPP4953 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ -30V/-5.0A,RDS(ON)= 60mΩ@VGS=- 10V ‹ -30V/-4.5A,RDS(ON)= 80mΩ@VGS=- 6V ‹ -30V/-3.7A,RDS(ON)= 90mΩ@VGS=-4.