Datasheet4U Logo Datasheet4U.com

SPP8803 - P-Channel MOSFET

General Description

The SPP8803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • ‹ -20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V ‹ -20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V ‹ -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TSSOP-8P package design.

📥 Download Datasheet

Datasheet Details

Part number SPP8803
Manufacturer SYNC POWER
File Size 210.28 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP8803 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPP80N03 SIPMOS Power Transistor Siemens Semiconductor
SPP80N03L Power Transistor Siemens Semiconductor
SPP80N03S2-03 OptiMOS Power-Transistor Infineon Technologies
SPP80N03S2L-03 OptiMOS Power-Transistor Infineon Technologies
SPP80N03S2L-04 Power-Transistor Infineon Technologies

Other Datasheets by SYNC POWER

Part Number Description
SPP8803B P-Channel MOSFET
SPP8813 N-Channel MOSFET
SPP8835 P-Channel MOSFET
SPP8863 N-Channel MOSFET
SPP8525 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPP8803 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ -20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V ‹ -20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V ‹ -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.