SPP8803B Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8803B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features - -20V/-7.0A,RDS(ON)=22mΩ@VGS=-4.5V - -20V/-6.0 A,RDS(ON)=28mΩ@VGS=-2.5V - -20V/-5.0 A, , RDS(ON)=40mΩ@VGS=-1.8V - Super high density cell design for extremely Low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TSSOP-8 package design APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter PIN CONFIGURATION(TSSOP- 8) PART MARKING 2020/02/27 Ver.2 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol D1 S1 S1 G1 G2 S2 S2 D2 Description Drain Source Source Gate Gate Source Source Drain ORDERING INFORMATION Part...