SPP8803B Description
The SPP8803B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPP8803B Key Features
- 20V/-7.0A,RDS(ON)=22mΩ@VGS=-4.5V
- 20V/-6.0 A,RDS(ON)=28mΩ@VGS=-2.5V
- 20V/-5.0 A, , RDS(ON)=40mΩ@VGS=-1.8V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum
- TSSOP-8 package design
SPP8803B Applications
- Power Management in Note book