SPP8803 Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features ‹ -20V/-7.0A,RDS(ON)= 20mΩ@VGS=-4.5V ‹ -20V/-6.0 A,RDS(ON)= 25mΩ@VGS=-2.5V ‹ -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TSSOP-8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(TSSOP - 8P) .. PART MARKING 2008 / 04 /20 Ver.1 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPP8803TS8RG SPP8803TS8TG ※ SPP8803TS8RG : 13” Tape Reel ; Pb - Free ※ SPP8803TS8TG : Tube ; Pb - Free Symbol D1 S1 S1 G1 G2 S2 S2 D2 Description Drain Source Source Gate Gate Source Source Drain Package TSSOP- 8P TSSOP- 8P Part Marking 8803 8803 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter .. Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA Typical -20 ±12 Unit Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient V V A A A W ℃ ℃ ℃/W -7.0 -5.8 -30 -2.3 1.5 0.9 -55/150 -55/150 80 2008 / 04 /20...