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SDM4410 Datasheet Preview

SDM4410 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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S DM4410Green
Product
S amHop Microelectronics C orp.
Mar.01,2006 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m ) Max
13.5 @ VGS = 10V
30V 10A
20 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=25 C
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
20
10
39
1.7
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
50
C /W
1
Free Datasheet http://www.datasheet4u.net/




SamHop

SDM4410 Datasheet Preview

SDM4410 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S DM4410
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min TypC Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA
30
IDSS VDS =24V, VGS =0V
IGSS VGS = 16V, VDS =0V
V
1 uA
100 nA
VGS(th) VDS =VGS, ID = 250uA 1 1.5 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID = 9A
VGS =4.5V, ID= 5A
9 13.5 m ohm
11 20 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 10V, VGS = 10V
VDS = 10V, ID =9A
20
24
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
VDS =15V, VGS = 0V
f =1.0MHZ
1290
280
180
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V
tr
ID = 1A
VGS = 10V
tD(OFF) R GEN = 6 ohm
tf
18
24
52
23
Total Gate Charge
Qg VDS =10V, ID = 9A,VGS =10V
VDS =10V, ID = 9A,VGS =4.5V
30.6
14.5
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =10V, ID = 9A
Qgd VGS =10V
3
6.8
2
A
S
PF
PF
PF
ns
ns
ns
ns
nC
nC
nC
nC
Free Datasheet http://www.datasheet4u.net/


Part Number SDM4410
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop
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