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SMD8V50SP Datasheet Preview

SMD8V50SP Datasheet

MOS Controlled Diode

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SMD8V50SP pdf
SMD8V50SPGreen
Product
Sa mHop Microelectronics C orp.
MOS Controlled Diode
Ver 1.0
PRODUCT SUMMARY
VRRM IO VF(MAX) @ 25°C IR(MAX) @ 25°C
50V 8A
0.58V
0.5mA
FEATURES
Low Profile Design for Smart Phone Charger
Ideal for SMT Mounting
Low forward voltage drop
High forward surge capability
Excellent High Temperature Stability
TO-277
Top View
Bottom View
ANODE PINS
BOTTOMSIDE
HEAT SINK
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VRRM
Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
VRM DC Blocking Voltage
VR(RMS)
RMS Reverse Voltage
IO Average Rectified Output Current
I FSM
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
EAS
Non-Repetitive Avalanche Energy
(TJ= 25°C,IAS = 10,L = 5mH)
PARM
Repetitive Peak Avalanche Energy
Value
50
50
50
35
8
120
170
24000
Unit
V
V
V
V
A
A
mJ
W
THERMAL CHARACTERISTICS
Symbol
R JA
TJ
T STG
Parameter
Thermal Resistance, Junction-to-Ambient
Operating Temperature Range
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol Parameter
VF Forward Voltage Drop
IR Leakage Current
Conditions
IF = 5A, TJ = 25°C
IF = 8A, TJ = 25°C
IF = 8A, TJ = 125°C
VR = 50V, TJ = 25°C
VR = 50V, TJ = 125°C
CT Total Capacitance
VR = 50V, f = 1MHz
Value
70
-55 to 150
-55 to 175
Min Typ
0.45
0.53
0.52
90
75
Unit
°C/W
°C
°C
Max
0.50
0.58
0.57
500
100
Unit
V
V
V
uA
mA
pF
Details are subject to change without notice.
1
Nov,14,2014
www.samhop.com.tw



SamHop
SamHop

SMD8V50SP Datasheet Preview

SMD8V50SP Datasheet

MOS Controlled Diode

No Preview Available !

SMD8V50SP pdf
SMD8V50SP
Ver 1.0
100
10
TA=150 C
1 125 C
0.1 85 C
25 C -55 C
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6
VF, Instantaneous Forward Voltage (V)
Figure 1. Typical Forward Characteristics
1000000
100000
10000
1000
100
10
1
0.1
0.01
1
TA=150 C
125 C
85 C
25 C
-55 C
10 20 30 40 50
VR, Instantaneous Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
10000
1000
f = 1MHz
100
10
0 10 20 30 40 50
VR, Instantaneous Reverse Voltage (V)
Figure 3. Total Capacitance vs. Reverse Voltage
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10
IF(AV) Average Forward Current (A)
Figure 4. Forward Power Dissipation
10
Based on Lead Temp (°C)
8
6
Note 1
4
2
100000
10000
1000
0
0 25 50 75 100 125 150
TC, Case Temp (°C)
Figure 4. Forward Power Dissipation
100
0 0.1 1 10 100 1000 10000
TP, Pulse Duration (uS)
Figure 6. Maximum Avalanche Power Curve
Note : 1.Device mounted on FR-4 substrate, 2oz copper.
2
Nov,14,2014
www.samhop.com.tw


Part Number SMD8V50SP
Description MOS Controlled Diode
Maker SamHop
Total Page 4 Pages
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SMD8V50SP pdf
SMD8V50SP Datasheet PDF
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