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SamHop Microelectronics

SDD04N65 Datasheet Preview

SDD04N65 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Green SDU/D04N65
Product
SamHop Microelectronics corp.
Ver 2.3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
650V
4A
2.5 @VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU04N65HZ
TO-252
SDD04N65HS
TO-251S
SDD04N65HL
TO-251L
Marking Code
SDU04N65
SDD04N65
SDD04N65
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C
TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
650
±30
4
2.8
11
100
83
42
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.8 °C/W
50 °C/W
Details are subject to change without notice.
1
Jan,02,2014
www.samhop.com.tw




SamHop Microelectronics

SDD04N65 Datasheet Preview

SDD04N65 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDU/D04N65
Ver 2.3
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=520V , VGS=0V
VGS= ±30V , VDS=0V
650 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=2A
VDS=20V , ID=2A
2 3 4V
2.5 3.2 ohm
3.3 S
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
490 pF
54 pF
12 pF
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=325V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=325V,ID=1A,VGS=10V
VDS=325V,ID=1A,
VGS=10V
23 ns
17 ns
29 ns
12 ns
8.2 nC
1.7 nC
3.8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
0.81 1.4
V
Jan,02,2014
2 www.samhop.com.tw


Part Number SDD04N65
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
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