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SamHop Microelectronics

SDP04N65 Datasheet Preview

SDP04N65 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP04N65
SDF04N65
Ver 2.2
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
650V
4A
2.3 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP04N65HZ
TO-220
SDP04N65PZ
TO-220
SDF04N65HZ
TO-220F
SDF04N65PZ
TO-220F
Marking Code
SDP04N65
04N65
SDF04N65
04N65
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP04N65 SDF04N65
VDS Drain-Source Voltage
VGS Gate-Source Voltage
650
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
44
2.8 2.8
IDM -Pulsed a
12 12
EAS Single Pulse Avalanche Energy c
324
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
94 31
47 15.6
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.6 4.8
62.5 62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw




SamHop Microelectronics

SDP04N65 Datasheet Preview

SDP04N65 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDP04N65
SDF04N65
Ver 2.2
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=520V , VGS=0V
VGS= ±30V , VDS=0V
650
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=2A
VDS=20V , ID=2A
VDS=25V,VGS=0V
f=1.0MHz
VDD=325V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=325V,ID=1A,VGS=10V
VDS=325V,ID=1A,
VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Typ
3
2.3
2.9
500
57
14
20
17
24
11
11.5
2
5.3
0.77
Max Units
1
±100
V
uA
nA
4V
2.8 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.4 V
Dec,24,2013
2 www.samhop.com.tw


Part Number SDP04N65
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
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