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SamHop Microelectronics

SDP08N60 Datasheet Preview

SDP08N60 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP08N60
SDF08N60
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V 8A 0.89 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP08N60HZ
TO-220
SDP08N60PZ
TO-220
SDF08N60HZ
TO-220F
SDF08N60PZ
TO-220F
Marking Code
SDP08N60
08N60
SDF08N60
08N60
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP08N60 SDF08N60
VDS Drain-Source Voltage
600
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
88
5.7 5.7
IDM -Pulsed a
23 23
EAS Single Pulse Avalanche Energy c
400
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
150 50
75 25
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1 3 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw




SamHop Microelectronics

SDP08N60 Datasheet Preview

SDP08N60 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDP08N60
SDF08N60
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4A
VDS=20V , ID=4A
VDS=25V,VGS=0V
f=1.0MHz
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A,
VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Typ Max Units
1
±100
V
uA
nA
3 4V
0.89 1.11 ohm
5.3 S
1080
106
10
pF
pF
pF
39 ns
18.4 ns
40 ns
15 ns
13.4 nC
2.9 nC
5.5 nC
0.79 1.4
V
Dec,24,2013
2 www.samhop.com.tw


Part Number SDP08N60
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
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