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SamHop Microelectronics

SDP10N60 Datasheet Preview

SDP10N60 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP10N60
SDF10N60
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V 10A 0.62 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP10N60HZ
TO-220
SDP10N60PZ
TO-220
SDF10N60HZ
TO-220F
SDF10N60PZ
TO-220F
Marking Code
SDP10N60
10N60
SDF10N60
10N60
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP10N60 SDF10N60
VDS Drain-Source Voltage
VGS Gate-Source Voltage
600
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
10 10
66
IDM -Pulsed a
40 40
EAS Single Pulse Avalanche Energy c
709
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
162 52
65 21
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.77
62.5
2.4
62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw




SamHop Microelectronics

SDP10N60 Datasheet Preview

SDP10N60 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDP10N60
SDF10N60
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=5.0A
VDS=25V,VGS=0V
f=1.0MHz
VDD=300V
ID=1A
RGEN= 25 ohm
VDS=480V,ID=1A,VGS=10V
VDS=480V,ID=1A,
VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=10A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=13mH,VDD = 50V.
Typ Max Units
1
±100
V
uA
nA
4V
0.62 0.75 ohm
1650
165
18
pF
pF
pF
25 ns
70 ns
140 ns
80 ns
48 nC
7.0 nC
18 nC
1.4 V
Dec,24,2013
2 www.samhop.com.tw


Part Number SDP10N60
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
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