900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SamHop Microelectronics

SDP18N50 Datasheet Preview

SDP18N50 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP18N50
SDF18N50
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
500V 18A 0.25 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP18N50HZ
TO-220
SDP18N50PZ
TO-220
SDF18N50HZ
TO-220F
SDF18N50PZ
TO-220F
Marking Code
SDP18N50
18N50
SDF18N50
18N50
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP18N50 SDF18N50
VDS Drain-Source Voltage
VGS Gate-Source Voltage
500
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
18 18
10.8 10.8
IDM -Pulsed a
72 72
EAS Single Pulse Avalanche Energy c
990
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
236 38
94 14.1
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.53 3.3 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw




SamHop Microelectronics

SDP18N50 Datasheet Preview

SDP18N50 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDP18N50
SDF18N50
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=400V , VGS=0V
VGS= ±30V , VDS=0V
500
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=9.0A
VDS=25V,VGS=0V
f=1.0MHz
VDD=250V
ID=1A
RGEN= 25 ohm
VDS=400V,ID=1A,VGS=10V
VDS=400V,ID=1A,
VGS=10V
3
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=18A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=5.5mH,VDD = 50V.
Typ Max Units
1
±100
V
uA
nA
5V
0.25 0.32 ohm
2500
400
40
pF
pF
pF
70 ns
190 ns
100 ns
100 ns
50 nC
14 nC
22 nC
1.5 V
Dec,24,2013
2 www.samhop.com.tw


Part Number SDP18N50
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
PDF Download

SDP18N50 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SDP18N50 N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy