Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID
2A
R DS(ON) ( Ω) Typ
3.2 @ VGS=10V
G S
G D
S
SDU SERIES TO - 252AA(D-PAK)
SDD SERIES TO - 251(I-PAK).
Full PDF Text Transcription for SDU02N25 (Reference)
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SDU02N25. For precise diagrams, and layout, please refer to the original PDF.
Gre r Pro SDU/D02N25 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Field Effect Transistor PRODUCT SUMMARY V DSS 250V FEATURES Super high dense cell design for low R...
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UCT SUMMARY V DSS 250V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 2A R DS(ON) ( Ω) Typ 3.2 @ VGS=10V G S G D S SDU SERIES TO - 252AA(D-PAK) SDD SERIES TO - 251(I-PAK) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 250 ±30 TA=25°C TA=70°C 2 1.5 6 10.
SDU02N25 Datasheet
