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SamHop Microelectronics

SP4400 Datasheet Preview

SP4400 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP4400
Ver 1.0
PRODUCT SUMMARY (DIE 1)
VDSS
ID
RDS(ON) (mΩ) Max
40V 28A
23 @ VGS=10V
34 @ VGS=4.5V
PRODUCT SUMMARY (DIE 2)
VDSS
ID
RDS(ON) (mΩ) Max
40V 66A
10 @ VGS=10V
15 @ VGS=4.5V
G2
S2
S2
S2
S1/D2
PDFN 5x6
G1
D1
D1
D1
S2 5
S2 6
S2 7
G2 8
S1/D2
4 D1
3 D1
2 D1
1 G1
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C
TC=70°C
IDM -Pulsed a c
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Die 1
Die 2
40
±20
28 66
22.4 52.8
62 114
49 121
31 78
20 50
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
4 1.6
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Mar,19,2015
www.samhop.com.tw




SamHop Microelectronics

SP4400 Datasheet Preview

SP4400 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP4400
Ver 1.0
DIE 1 - ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ
Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
40 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=7A
VGS=4.5V , ID=6A
VDS=5V , ID=7A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=20V,ID=7A,VGS=10V
VDS=20V,ID=7A,VGS=4.5V
VDS=20V,ID=7A,
VGS=10V
1 1.8 3
V
18 23 m ohm
25 34 m ohm
15 S
533 pF
87 pF
71 pF
12 ns
13 ns
18 ns
21 ns
10 nC
5.5 nC
1.2 nC
3 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
0.77 1.2
V
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Mar,19,2015
2 www.samhop.com.tw


Part Number SP4400
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
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