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SP4510DGGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
48A
19 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
87 65
DFN 5x6
PIN1
12 34
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C TC=70°C
100 ±20 48 38.4
IDM -Pulsed a c
98
EAS Single Pulse Avalanche Energy d
132
TC=25°C PD Maximum Power Dissipation
TC=70°C
83 53
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
1.
SP4510DG Datasheet
