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SamHop Microelectronics

STD10N20 Datasheet Preview

STD10N20 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STU10N20
Sa mHop Microelectronics C orp.
STD10N20Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
200V
306 @ VGS=10V
8A
328 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C
TC=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
200
±20
8
6.4
23
16
50
32
-55 to 150
2.5
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Aug,14,2014
www.samhop.com.tw




SamHop Microelectronics

STD10N20 Datasheet Preview

STD10N20 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STU10N20
STD10N20
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=160V , VGS=0V
VGS= ±20V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=4A
VGS=4.5V , ID=3.9A
VDS=10V , ID=4A
VDS=25V,VGS=0V
f=1.0MHz
VDD=100V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=100V,ID=1A,VGS=10V
VDS=100V,ID=1A,VGS=4.5V
VDS=100V,ID=1A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ Max Units
1
±100
V
uA
nA
23V
306 370 m ohm
328 430 m ohm
11 S
1040
63
30
20
15.5
28
10
15
7.7
2.2
4
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
0.81 1.3 V
Aug,14,2014
2 www.samhop.com.tw


Part Number STD10N20
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 10 Pages
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