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STD12L01 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-251 Package. ID 12A R DS(ON) (m ) Max 160 @ VGS=10V G D S STD SERIES TO - 251 ( I - PAK ).

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Datasheet Details

Part number STD12L01
Manufacturer SamHop Microelectronics
File Size 87.64 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD12L01 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Gre r Pro STD12L01 Ver 1.3 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-251 Package. ID 12A R DS(ON) (m ) Max 160 @ VGS=10V G D S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 12 9.