SamHop Microelectronics STD12L01
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STD12L01 |
|---|---|
| Datasheet | STD12L01 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-251 Package. ID 12A R DS(ON) (m ) Max 160 @ VGS=10V G D S STD SERIES TO - 251 ( I - PAK )ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 12 9.6 35 25 TC=25°C TC=70°C 50 32 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 2.5 50 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Oct,29,2010 1 STD12L01 Ver 1.3ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero...
