Datasheet4U Logo Datasheet4U.com

STD12L01A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-251 Package. G D S STD SERIES TO - 251 ( I - PAK ).

📥 Download Datasheet

Datasheet Details

Part number STD12L01A
Manufacturer SamHop Microelectronics
File Size 86.22 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD12L01A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD120 RESETTABLE FUSES Littelfuse
STD120N4F6 N-channel Power MOSFET STMicroelectronics
STD120N4LF6 N-channel Power MOSFET STMicroelectronics
STD120S RESETTABLE FUSES Littelfuse
STD123ASF NPN Silicon Power Transistor AUK

Other Datasheets by SamHop Microelectronics

Part Number Description
STD12L01 N-Channel Logic Level Enhancement Mode Field Effect Transistor
STD102S N-Channel MOSFET
STD10L01 N-Channel Enhancement Mode Field Effect Transistor
STD10N10 N-Channel MOSFET
STD10N20 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Gr Pr STD12L01A Ver 2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 12A R DS(ON) (m Ω) Max 140 @ VGS=10V 170 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-251 Package. G D S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 12 9.