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SamHop Microelectronics

STD20N03L Datasheet Preview

STD20N03L Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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S T U/D20N03L
S amHop Microelectronics C orp.
J uly 23 ,2004 V er1.1
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
www.DataShee3t40UV.com 28A
R DS (ON) ( m W ) Max
23 @ VGS = 10V
39 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
Drain-S ource Diode Forward C urrent
S ymbol
VDS
VGS
ID
IDM
IS
Limit
30
20
28
70
20
Unit
V
V
A
A
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
TJ, TSTG
R JC
R JA
-55 to 175
3
50
C
C /W
C /W
1




SamHop Microelectronics

STD20N03L Datasheet Preview

STD20N03L Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STU/D20N03L
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
www.DataSZehreoeGt4aUte.cVoomltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol Condition
BVDSS VGS= 0V, ID= 250uA
IDSS VDS = 24V, VGS = 0V
IGSS VGS = 20V, VDS = 0V
VGS(th)
RDS(ON)
ID(ON)
gFS
b
VDS= VGS, ID= 250uA
VGS= 10V, ID=20A
VGS= 4.5V, ID= 10A
VDS= 10V, VGS= 10V
VDS= 10V, ID= 20A
CISS
COSS
CRSS
b
VDs=25V, VGS= 0V
f = 1.0MHZ
tD(ON) VDD = 15V
t
ID =1A
VGS = 10V
tD(OFF) R L = 15 ohmRGEN = 11
t ohm
Qg VDD = 15V,ID = 1A,VGS =10V
VDS = 15V,ID = 1A,VGS =4.5V
Qgs VDD = 15V, ID = 1A
Qgd RL=15 ohm
2
Min Typ Max Unit
30 V
1 uA
100 nA
1 1.5 2.5 V
17 23 m ohm
30 39 m ohm
50 A
8S
614 PF
83 PF
61 PF
15.2 ns
4.5 ns
23.3 ns
12.7 ns
17.8 nC
8.8 nC
2.8 nC
3 nC


Part Number STD20N03L
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
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