This series of POWER MOSFETS represents the latest development in low voltage technology.
The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche energy capability.
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STD20N06
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STD20N06
s s s s s s s s
V DSS 60 V
R DS( on) < 0.03 Ω
ID 20 A (*)
s
TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
3 1
IPAK TO-251 (Suffix ”-1”)
2
1
DPAK TO-252
3
(Suffix ”T4”)
DESCRIPTION This series of POWER MOSFETS represents the latest development in low voltage technology.
STD20N06 Datasheet
