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STD3055L2 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

  • (mW) ID 18A RDS(ON) Max Super high dense cell design for low RDS(ON). 40 @ VGS = 10V 45 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S.

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Datasheet Details

Part number STD3055L2
Manufacturer SamHop Microelectronics
File Size 735.30 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD3055L2 Datasheet

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STD3055L N-Channel Logic Level E nhancement Mode F ield E ffect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES (mW) ID 18A RDS(ON) Max Super high dense cell design for low RDS(ON). 40 @ VGS = 10V 45 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package.
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