Datasheet Summary
S T U/D9410
S amHop Microelectronics C orp. P reliminary May.28 2004
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
.. 30V
F E AT UR E S
( m W ) Max
24A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
32 @ V G S = 10V 57 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 30 20 24 60 20 50 -55 to 175
Unit...