* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 3.3 X 3.3 PIN 1 G S S S (Bottom view) DD D D D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS Parameter Drain-Source Voltage d Gate-Source Voltage ID
STF1016C Datasheet (133.70 KB)
STF1016C
SamHop Microelectronics
133.70 KB
N-channel enhancement mode field effect transistor.
STF1016CGreen Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) .
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