SamHop Microelectronics STF2454A
Dual N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STF2454A |
|---|---|
| Datasheet | STF2454A Download |
| Manufacturer |  SamHop Microelectronics |
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view)ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 24 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 8.6 6.9 42 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.07 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 75 °C/W Details are subject to change without notice. Apr,20,2011 1 STF2454A Ver 3.2ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=20V , VGS=0V Min 24 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±12V , VDS=0V 1 ±10 VDS=VGS , ID=1.0mA VGS=4.5V , ID=4.3A VGS=4.0V , ID=4.
