SamHop Microelectronics STF2458
Dual N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STF2458 |
|---|---|
| Datasheet | STF2458 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact G1 S1 T DF N 2X3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view)ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 24 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 10.0 8.0 60 a Units V V A A A W W °C Maximum Power Dissipation 1.56 1.00 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 80 °C/W Details are subject to change without notice. Sep,24,2013 1 STF2458 Ver 1.1ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Thr...
