STM6924
STM6924 is Dual N-Channel MOSFET manufactured by SamHop Microelectronics.
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
6.8A
R DS(ON) (m Ω) Max
28 @ VGS=10V 46 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a
Limit 40 ±20 TA=25°C TA=70°C d
Units V V A A A m J W W °C
6.8 5.4 25 18
-Pulsed b Single Pulse Avalanche Energy Maximum Power Dissipation a
TA=25°C TA=70°C
2 1.28 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a
°C/W
Details are subject to change without notice.
Nov,07,2008
.samhop..tw
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250u A VDS=32V , VGS=0V
Min 40
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) g FS Drain-Source On-State Resistance Forward Transconductance c
VGS= ±20V , VDS=0V
1 ±100 u A n A
VDS=VGS , ID=250u A VGS=10V , ID=6.8A VGS=4.5V , ID=5.3A VDS=5V ,...
