SamHop Microelectronics STM6928
Dual N-Channel MOSFET
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 9.5A R DS(ON) (m Ω) Max 14 @ VGS=10V 16 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 40 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 9.5 7.6 34 a Units V V A A A W W °C Maximum Power Dissipation 2.0 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Jun,22,2009 1 STM6928 Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON C...