SamHop Microelectronics STM6920
Dual N-Channel E nhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 25V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.5V, ID= 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 6A Min Typ C Max Unit 40 1 V uA 100 nA 1 1.8 20 35 15 8 947 117 77 2 16.7 19 3.6 10.1 5 14 24 12 4 5 28.7 38 18.2 8.7 2.8 3.3 1231 152 100 2.5 25 45 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =25V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =20V, ID =6A,V GS =10...