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Green Product
STM6924
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
6.8A
R DS(ON) (m Ω) Max
28 @ VGS=10V 46 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
a
Limit 40 ±20 TA=25°C TA=70°C
d
Units V V A A A mJ W W °C
6.8 5.4 25 18
-Pulsed b Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
2 1.
STM6924 Datasheet
