SamHop Microelectronics STM6924
Dual N-Channel MOSFET
| Part No. | STM6924 |
|---|---|
| Datasheet | STM6924 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 6.8A R DS(ON) (m Ω) Max 28 @ VGS=10V 46 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a Limit 40 ±20 TA=25°C TA=70°C d Units V V A A A mJ W W °C 6.8 5.4 25 18 -Pulsed b Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Nov,07,2008 1 STM6924 Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDS...
