STS3401A
STS3401A is P-Channel Enhancement Mode Field Effect Transistor manufactured by SamHop Microelectronics.
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
S OT -23
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
Limit -30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.2 -2.6 -12 a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.8 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a
°C/W
Details are subject to change without notice.
Jun,29,2011
.samhop..tw
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=-250u A VDS=-24V , VGS=0V
Min -30
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) g FS Drain-Source On-State Resistance Forward Transconductance c
VGS= ±20V , VDS=0V
-1 ±100 u A n A
VDS=VGS , ID=-250u A VGS=-10V , ID=-1.6A VGS=-4.5V , ID=-1.3A VDS=-5V , ID=-1.6A
-1.0
-1.6 63 94 6
-3.0 79 127
V m ohm m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS t D(ON) tr t D(OFF) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c
VDS=-15V,VGS=0V f=1.0MHz
345 85 69 p F p F p F
VDD=-15V ID=-1A VGS=-10V RGEN= 6 ohm VDS=-15V,ID=-1.6A,VGS=-10V VDS=-15V,ID=-1.6A,VGS=-4.5V VDS=-15V,ID=-1.6A, VGS=-10V
7.2 12.5 7.5 9 8.6 4.5 0.55 2.5 ns ns ns ns n C n C n C n C
DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage VGS=0V,IS=-1.6A -0.84 -1.2...
