SamHop Microelectronics STS3401
P-Channel Enhancement Mode Field Effect Transistor
Green Product S T S 3401 J un.15 2004 S amHop Microelectronics C orp. P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m Ω ) Max ID -3A R DS (ON) S uper high dense cell design for low R DS (ON ). 75 @ V G S = -10V 100 @ V G S = -4.5V R ugged and reliable. S OT-23 P ackage. D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 30 20 -3 - 10 -1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 100 C /W 1 S T S 3401 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition...