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STS3401A - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT -23 D S G G D S.

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Datasheet Details

Part number STS3401A
Manufacturer SamHop Microelectronics
File Size 90.84 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STS3401A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Gre r Pro STS3401A Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -3.2A R DS(ON) (m Ω) Max 79 @ VGS=-10V 127 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.2 -2.6 -12 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.