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SamHop Microelectronics

STU2040PL Datasheet Preview

STU2040PL Datasheet

P-Channel Enhancement Mode MOSFET

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S amHop Microelectronics C orp.
S T U/D2040P L
Nov.18,2004
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
www.DataShee-t44U0V.com -20A
45 @ VGS = -10V
60 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Drain-S ource Voltage
VDS
Gate-S ource Voltage
VGS
Drain C urrent-C ontinuous a @ Ta
-P ulsed b
25 C
70 C
ID
IDM
Limit
-40
20
-20
-16.7
-84
Unit
V
V
A
A
A
Drain-S ource Diode Forward C urrent a
IS
-20
A
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
Ta= 25 C
Ta=70 C
PD
TJ, TSTG
50
35
-55 to 175
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3 C/W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W




SamHop Microelectronics

STU2040PL Datasheet Preview

STU2040PL Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

S T U/D2040P L
P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
www.DataSheet4U.com
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =-250uA -40
IDSS VDS =-32V, VGS= 0V
IGSS VGS = 20V, VDS= 0V
V
1 uA
100 nA
VGS(th) VDS =VGS, ID =-250uA -0.8 -1.5 -2.0 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =-10V, ID= -16A
VGS =-4.5V, ID= -10A
35 45 m ohm
46 60 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS =-5V, VGS = -10V
VDS = -10V, ID = -15A
50
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
COSS
VDS =-10V, VGS = 0V
f =1.0MHZ
CRSS
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = -24V
tr ID = -16 A
tD(O F F )
VGS = -10V
R GEN = 4.7 ohm
tf
Total Gate Charge
Qg VDS =-24V, ID =-16A,VGS =-10V
A
15 S
1115 1250 PF
200 225 PF
125 140 PF
3 ohm
11.5 13 ns
7.3 8.5 ns
53.1 62 ns
31.8 37 ns
19.5 22 nC
Gate-S ource Charge
Gate-Drain Charge
VDS =-24V, ID =-16A,VGS =-4.5V
Qgs VDS =-24V, ID = -16A
Qgd VGS =-10V
2
9.4 11 nC
4.1 4.8 nC
2.8 3.2 nC


Part Number STU2040PL
Description P-Channel Enhancement Mode MOSFET
Maker SamHop Microelectronics
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