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SamHop Microelectronics

STU2455PLS Datasheet Preview

STU2455PLS Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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S T U/D2455P LS
S amHop Microelectronics C orp.
Dec 30, 2005
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S ID R DS (ON) ( m W ) Max
www.DataShee-t545UV.com -24
42 @ VGS = -10V
55 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage R ating
S ymbol
V s pike c
Limit
-60
Unit
V
Drain-S ource Voltage
VDS -55
V
Gate-S ource Voltage
VGS 20 V
Drain C urrent-C ontinuous @ Tc=25 C
-P ulsed a
ID
IDM
-24
-72
A
A
Drain-S ource Diode Forward C urrent
IS
-20
A
Maximum P ower Dissipation @ Tc=25 C
Operating Junction and S torage
Temperature R ange
PD
TJ, TSTG
50
-55 to 175
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
1
3
50
C /W
C /W




SamHop Microelectronics

STU2455PLS Datasheet Preview

STU2455PLS Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S T U/D2455P LS
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
www.DataSheet4U.com
Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS =0V, ID =-250uA -55
IDSS VDS =-44V, VGS =0V
IGSS VGS = 20V, VDS= 0V
V
-1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.7 -3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =-10V, ID= -10A
VGS =-4.5V, ID =- 6A
33 42 m ohm
42 55 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = -10V, VGS = -10V -24
VDS = -10V, ID= -10A
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
COSS
VDS =-30V, VGS = 0V
f =1.0MHZ
CRSS
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = -30V
tr ID = -1 A
tD(O F F )
VGS = -10V
R GEN = 6 ohm
tf
16
1730
185
125
1.7
21
25
127
35
A
S
PF
PF
PF
ohm
ns
ns
ns
ns
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-S ource Charge
Gate-Drain Charge
Qg
VDS =-30V, ID = -10A
VGS =-10V
Qgs
Qgd
2
31 nC
13.5 nC
3.5 nC
7 nC


Part Number STU2455PLS
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
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