STU428S Datasheet | SamHop Microelectronics

S T U/D428S S am Hop Microelectronics C orp. Mar.8,2007 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S S uper high dense cell design for low R DS (ON ). 50A R DS (ON) ( m Ω ı ) T yp 8 @ V G S = 10V 10 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TC=25 C a -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 40 20 50 100 20 50 -55 to 175 Unit V V A A A W C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D428S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) g FS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250u A V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250u A V GS =10V, ID = 10A V GS =4.5V, ID= 6A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A Min Typ C Max Unit 40 1 10 1 1.7 8 10 30 26 1505 220 150 0.3 23 19 85 27 28 12.5 3 6 3 10 13 V u A u A V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance PF PF...