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SamHop Microelectronics

STU5025NLS Datasheet Preview

STU5025NLS Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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S T U/D5025NLS
S amHop Microelectronics C orp.
Dec 30,2005
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
www.DataShee2t45UV.com 50A
R DS (ON) ( m W ) Max
8 @ VGS = 10V
12 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage R ating
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TC=25 C
-P ulsed a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
S ymbol
V s pike c
VDS
VGS
ID
IDM
IS
PD
Limit
30
25
20
50
200
20
50
Unit
V
V
V
A
A
A
W
Operating and S torage Temperature R ange TJ, TS TG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1




SamHop Microelectronics

STU5025NLS Datasheet Preview

STU5025NLS Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

S T U/D5025NLS
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
www.DataSheet4U.com
Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS =0V, ID =250uA
IDSS VDS =20V, VGS =0V
IGSS VGS = 20V, VDS= 0V
25
V
1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.7 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =20A
VGS =4.5V, ID= 10A
6.5 8 m ohm
9 12 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = 10V, VGS = 10V
VDS = 10V, ID = 10A
50
22
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
COSS
VDS =15V, VGS = 0V
f =1.0MHZ
CRSS
1150
340
185
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
0.33
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V
tr ID = 1 A
tD(O F F )
VGS = 10V
R GEN = 6 ohm
tf
22
27
42
20
A
S
PF
PF
PF
ohm
ns
ns
ns
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg VDS =15V, ID =20A,VGS =10V
VDS =15V, ID =20A,VGS =4.5V
Qgs VDS =15V, ID = 20A
Qgd VGS =10V
2
29
13
3.5
8
nC
nC
nC
nC


Part Number STU5025NLS
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
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