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K4D263238I-UC Datasheet 128M GDDR SDRAM

Manufacturer: Samsung Semiconductor

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Overview

www.DataSheet4U.com K4D263238I-UC 128M GDDR SDRAM 128Mbit GDDR SDRAM Revision 1.1 January 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.

ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

Key Features

  • 2.5V ± 5% power supply for device operation.
  • 2.5V ± 5% power supply for I/O interface.
  • SSTL_2 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
  • Full page burst length for sequential burst type only.
  • Start address of the full page burst should be even.
  • All inputs except data & DM are samp.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung Electronics Logo K4D263238I-VC 128M-Bit GDDR SDRAM Samsung Electronics

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