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K4D263238I-VC - 128M-Bit GDDR SDRAM

General Description

The K4D263238I is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • 2.5V ± 5% power supply for device operation.
  • 2.5V ± 5% power supply for I/O interface.
  • SSTL_2 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
  • Full page burst length for sequential burst type only.
  • Start address of the full page burst should be even.
  • All inputs except data & DM are samp.

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Datasheet Details

Part number K4D263238I-VC
Manufacturer Samsung Electronics
File Size 475.81 KB
Description 128M-Bit GDDR SDRAM
Datasheet download datasheet K4D263238I-VC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com K4D263238I-VC 128M GDDR SDRAM 128Mbit GDDR SDRAM Revision 1.3 November 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.