K4D263238I-UC Overview
FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238I is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.
K4D263238I-UC Key Features
- 2.5V ± 5% power supply for device operation
- 2.5V ± 5% power supply for I/O interface
- SSTL_2 patible inputs/outputs
- 4 banks operation
- MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (seq
- Full page burst length for sequential burst type only
- Start address of the full page burst should be even
- All inputs except data & DM are sampled at the positive going edge of the system clock
- Differential clock input
- Write Interrupted by Read function
K4D263238I-UC Applications
- Samsung Electronics reserves the right to change products or specification without notice
