K4D263238I-UC Datasheet | Samsung Semiconductor

FEATURES - 2.5V ± 5% power supply for device operation - 2.5V ± 5% power supply for I/O interface - SSTL_2 patible inputs/outputs - 4 banks operation - MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave) - Full page burst length for sequential burst type only - Start address of the full page burst should be even - All inputs except data & DM are sampled at the positive going edge of the system clock - Differential clock input - Write Interrupted by Read function - Data I/O transactions on both edges of Data strobe - DLL aligns DQ and DQS transitions with Clock transition - Edge aligned data & data strobe output - Center aligned data & data strobe input - DM for write masking only - Auto & Self refresh - 32ms refresh period (4K cycle) - 100pin TQFP package - Maximum clock frequency up to 250MHz - Maximum data rate up to 500Mbps/pin ORDERING INFORMATION Part NO. K4D263238I-UC40 K4D263238I-UC50 Max Freq. 250MHz 200MHz Max Data Rate 500Mbps/pin 400Mbps/pin Interface SSTL_2 Package 100 TQFP K4D263238I-QC is the Leaded package part number. GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238I is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow...