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K4D26323GC - 128Mbit GDDR SDRAM

Download the K4D26323GC datasheet PDF. This datasheet also covers the K4D26323QG variant, as both devices belong to the same 128mbit gddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Key Features

  • 1.8V ± 0.1V power supply for device operation.
  • 1.8V ± 0.1V power supply for I/O interface www. DataSheet4U. com.
  • No Wrtie-Interrupted by Read Function.
  • 4 DQS’s ( 1DQS / Byte ).
  • Data I/O transactions on both edges of Data strobe.
  • DLL aligns DQ and DQS transitions with Clock transition.
  • Edge aligned data & data strobe output.
  • Center aligned data & data strobe input.
  • DM for write masking only.
  • Auto & Self refr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4D26323QG_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K4D26323QG-GC 128M GDDR SDRAM www.DataSheet4U.com 128Mbit GDDR SDRAM Revision 1.2 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.