K4D26323GC - 128Mbit GDDR SDRAM

This page provides the datasheet information for the K4D26323GC, a member of the K4D26323QG 128Mbit GDDR SDRAM family.

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4D26323GC
Manufacturer	Samsung semiconductor
File Size	360.75 KB
Description	128Mbit GDDR SDRAM
Datasheet	K4D26323GC Datasheet
Additional preview pages of the K4D26323GC datasheet.

K4D26323GC Product details

Description

The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.8V ± 0.1V power supply for device operation.
1.8V ± 0.1V power supply for I/O interface www. DataSheet4U. com.
No Wrtie-Interrupted by Read Function.
4 DQS’s ( 1DQS / Byte ).
Data I/O transactions on both edges of Data strobe.
DLL aligns DQ and DQS transitions with Clock transition.
Edge aligned data & data strobe output.
Center aligned data & data strobe input.
DM for write masking only.
Auto & Self refr.

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Other Datasheets by Samsung semiconductor

K4D26323QG - 128Mbit GDDR SDRAM

Published: Dec 23, 2008 |