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K4D26323QG - 128Mbit GDDR SDRAM

Datasheet Summary

Description

The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

  • 1.8V ± 0.1V power supply for device operation.
  • 1.8V ± 0.1V power supply for I/O interface www. DataSheet4U. com.
  • No Wrtie-Interrupted by Read Function.
  • 4 DQS’s ( 1DQS / Byte ).
  • Data I/O transactions on both edges of Data strobe.
  • DLL aligns DQ and DQS transitions with Clock transition.
  • Edge aligned data & data strobe output.
  • Center aligned data & data strobe input.
  • DM for write masking only.
  • Auto & Self refr.

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Datasheet preview – K4D26323QG

Datasheet Details

Part number K4D26323QG
Manufacturer Samsung semiconductor
File Size 360.75 KB
Description 128Mbit GDDR SDRAM
Datasheet download datasheet K4D26323QG Datasheet
Additional preview pages of the K4D26323QG datasheet.

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Full PDF Text Transcription

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K4D26323QG-GC 128M GDDR SDRAM www.DataSheet4U.com 128Mbit GDDR SDRAM Revision 1.2 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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