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K4D263238D

Manufacturer: Samsung Semiconductor

K4D263238D datasheet by Samsung Semiconductor.

K4D263238D datasheet preview

K4D263238D Datasheet Details

Part number K4D263238D
Datasheet K4D263238D_Samsungsemiconductor.pdf
File Size 239.98 KB
Manufacturer Samsung Semiconductor
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
K4D263238D page 2 K4D263238D page 3

K4D263238D Overview

FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

K4D263238D Key Features

  • 2.5V ± 5% power supply
  • SSTL_2 patible inputs/outputs
  • 4 banks operation
  • MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (s
  • Full page burst length for sequential burst type only
  • Start address of the full page burst should be even
  • All inputs except data & DM are sampled at the positive going edge of the system clock
  • Differential clock input
  • No Write Interrupted by Read function
  • Data I/O transactions on both edges of Data strobe

K4D263238I-VC from other manufacturers

View K4D263238I-VC datasheet index

Brand Logo Part Number Description Other Manufacturers
Samsung Electronics Logo K4D263238I-VC 128M-Bit GDDR SDRAM Samsung Electronics
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
K4D263238A 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
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