K4D263238D Datasheet | Samsung Semiconductor

FEATURES - 2.5V ± 5% power supply - SSTL_2 patible inputs/outputs - 4 banks operation - MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave) - Full page burst length for sequential burst type only - Start address of the full page burst should be even - All inputs except data & DM are sampled at the positive going edge of the system clock - Differential clock input - No Write Interrupted by Read function - Data I/O transactions on both edges of Data strobe - DLL aligns DQ and DQS transitions with Clock transition - Edge aligned data & data strobe output - Center aligned data & data strobe input - DM for write masking only - Auto & Self refresh - 32ms refresh period (4K cycle) - 100pin TQFP package - Maximum clock frequency up to 250MHz - Maximum data rate up to 500Mbps/pin ORDERING INFORMATION Part NO. K4D263238D-QC40 K4D263238D-QC50 Max Freq. 250MHz 200MHz Max Data Rate 500Mbps/pin 400Mbps/pin Interface SSTL_2 Package 100 TQFP GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. - 3 - Rev. 1.3 (Jul. 2002) PIN CONFIGURATION (Top View) 128M DDR...