K4D263238G-GC
K4D263238G-GC is 128Mbit GDDR SDRAM manufactured by Samsung Semiconductor.
FEATURES
- 2.5V ± 5% power supply for device operation
- 2.5V ± 5% power supply for I/O interface
- SSTL_2 patible inputs/outputs
- 4 banks operation
- MRS cycle with address key programs -. Read latency 3, 4 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave)
- All inputs except data & DM are sampled at the positive going edge of the system clock
- Differential clock input
- No Wrtie-Interrupted by Read Function
- 4 DQS’s ( 1DQS / Byte )
- Data I/O transactions on both edges of Data strobe
- DLL aligns DQ and DQS transitions with Clock transition
- Edge aligned data & data strobe output
- Center aligned data & data strobe input
- DM for write masking only
- Auto & Self refresh
- 32ms refresh period (4K cycle)
- 144-Ball FBGA
- Maximum clock frequency up to 350MHz
- Maximum data rate up to 700Mbps/pin
ORDERING INFORMATION
Part NO. K4D263238G-GC2A K4D263238G-GC33 K4D263238G-GC36 Max Freq. 350MHz 300MHz 275MHz Max Data Rate 700Mbps/pin 600Mbps/pin 550Mbps/pin SSTL_2 144-Ball FBGA Interface Package
K4D263238G-VC is the Lead Free package part number.
GENERAL...
