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K4T51163QG Datasheet | Samsung Semiconductor
Part:
K4T51163QG
Description:
512Mb G-die DDR2 SDRAM
Manufacturer:
Samsung Semiconductor
Size:
0.96 MB
K4T51163QG Datasheet (PDF) Download
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Samsung Semiconductor
K4T51163QG
Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Applications
DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control
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