• Part: K4T51163QB
  • Description: 512Mb B-die DDR2 SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 507.78 KB
K4T51163QB Datasheet (PDF) Download
Samsung Semiconductor
K4T51163QB

Key Features

  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
  • Off-Chip Driver(OCD) Impedance Adjustment
  • On Die Termination
  • Average Refesh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C