K7D803671B - SRAM

Samsung

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Datasheet Details

Part number	K7D803671B
Manufacturer	Samsung
File Size	299.69 KB
Description	SRAM
Datasheet	K7D803671B-Samsung.pdf

K7D803671B Product details

Description

Pin Name K, K SA SA0, SA1 DQ VDD VDDQ VREF B1 B2 B3 Pin Description Differential Clocks Synchronous Address Input Synchronous Burst Address Input (SA0 = LSB) Synchronous Data I/O Core Power Supply Output Power Supply HSTL Input Reference Voltage Load External Address Burst R/W Enable Single/Double Data Selection 2:1 MUX Dec.Data Out Memory Array 256Kx36 or (512Kx18) 36(or 18)x2 S/A Array 36(or 18)x2 2 : 1 MUX Data In 36(or18)x2 W/D Array 36(or18)x2 Write Buffer Output Buffer Echo Cl

Features

256Kx36 or 512Kx18 Organizations.
153(9x17) Pin Ball Grid Array Package(14mm x 22mm).
Programmable Impedance Output Drivers.
Maximum Frequency : 333MHz (Data Rate : 666Mbps).
2.5V Core/1.5V Output Power Supply(2.0V max VDDQ).
HSTL Input and Outputs.
Single Differential HSTL Clock. Organization.
Synchronous Pipeline Mode of Operation with Self-Timed Late Write. Part Number Maximum Access Frequency Time.

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K7D801871B - SRAM

Published: Sep 12, 2018 |