K8D3216UT Datasheet | Samsung Semiconductor

FEATURES GENERAL DESCRIPTION - Single Voltage, 2.7V to 3.6V for Read and Write operations - Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode) - Fast Read Access Time : 70ns - Read While Program/Erase Operation - Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 24Mb - Secode(Security Code) Block : Extra 64K Byte block - Power Consumption (typical value @5MHz) - Read Current : 14m A - Program/Erase Current : 15m A - Read While Program or Read While Erase Current : 25m A - Standby Mode/Auto Sleep Mode : 5µA - WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes special protection of two outermost boot block at VIH, the two blocks return to normal block protect status - Program time at VHH : 9µs/word - Erase Suspend/Resume - Unlock Bypass Program - Hardware RESET Pin - mand Register Operation - Block Group Protection / Unprotection - Supports mon Flash Memory Interface - Industrial Temperature : -40°C to 85°C - Endurance : 100,000 Program/Erase Cycles Minimum - Data Retention : 10 years - Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch 48 Ball TBGA : 6 x 8.5 mm / 0.8 mm Ball pitch 48 Ball FBGA : 6 x 8.5 mm / 0.8 mm Ball pitch The K8D3216U featuring single 3.0V power supply, is a 32Mbit NOR-type Flash Memory organized as 4Mx8 or 2M x16. The memory architecture of the device is designed to divide its memory arrays into 71 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D3216U NOR Flash consists of two banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Access times of 70ns, 80ns and 90ns are available for the device. The device′s fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single...