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K8D1716UBB - 16M Dual Bank NOR Flash Memory

Download the K8D1716UBB datasheet PDF. This datasheet also covers the K8D1716U variant, as both devices belong to the same 16m dual bank nor flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16.

The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group.

Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations.
  • Organization 1,048,576 x 16 bit (Word mode).
  • Fast Read Access Time : 70ns.
  • Read While Program/Erase Operation.
  • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb.
  • Secode(Security Code) Block : Extra 64K Byte block.
  • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby M.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K8D1716U_Samsung.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.